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Advanced Technology for your Process

UCP Plasma Cleaning Systems are equipped with different plasma technologies for outstanding cleaning results. The patented hydrogen process (US 6203637) is well-suited for removing all kinds of surface contaminants.

Plasma chemical cleaning with DC plasma

Schematic: Plasma chemical cleaning with DC plasma - Click to enlarge The batch-type Plasma Cleaning Systems LFC102 and the LFC150 family operate with a low pressure DC plasma generated by a hot filament. The patented plasma chemical cleaning process takes advantage of low-energy ions and radicals that react with surface contaminants to form volatile compounds.

Plasma chemical cleaning with RF downstream plasma

Schematic: Plasma chemical cleaning with RF downstream plasma - Click to enlarge The LFC060 CS Plasma Cleaning System uses the principle of plasma chemical cleaning. With this technology excitation of the process gas is accomplished by an RF powered hollow cathode plasma source. Remote plasma processing ensures that sensitive substrates are effectively shielded from the primary RF plasma.

Plasma physical cleaning with RF direct plasma

Schematic: Plasma physical cleaning with RF direct plasma - Click to enlarge The LFC060 PS Plasma Cleaning System employs the principle of plasma physical cleaning (sputtering).
Energetic ions are generated in a planar diode geometry in which the grounded chamber wall serves as the counter electrode. The sputter rate can be varied by controlling RF power input and process gas flow.