LFC063 CW Plasma Cleaning System for Industrial Production - Technical Data

Process Gas consumption

• Argon (Ar): < 200 sccm
• Argon/Hydrogen (Ar/H₂ 96/4): < 200 sccm
• Argon/Nitrogen (Ar/N₂ 85/15): < 200 sccm
• Argon/Oxygen (Ar/O₂ 92/8): < 200 sccm
• Venting gas N₂: 400 litre/h

System

• Wafer handling: automatic
• Throughput [wafers/h]: > 25
• Wafer size: 8'', 12''

Options

• Load ports and wafer handling under N₂ atmosphere
• Wafer handling system for ultra thin wafers

Dimensions and Weights
 

• All dimensions in mm
• Weight: 600 kg net
• Compact design - easy access to media and components

Patents, standards and certifications

• Patented HCD Plasma Process (US 6902774B2)
• Patented Hydrogen Process (US 6203637)
• SEMI Standard S2 / S8 / S14 reported
• ISO 9001 and ISO 14001 registered
• CE certified

Downloads
 

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