Device quality of in situ plasma cleaning for silicon molecular beam epitaxy

W. Hansch ^a,* , I. Eisele ^a, H. Kibbel ^b, U. König ^b, J. Ramm ^c

Abstract

Different substrate cleaning procedures were used before fabrication of pin diodes by silicon molecular beam epitaxy (MBE). We investigated the quality of these diodes in order to demonstrate the superior quality of in situ low energy plasma cleaning in ultra-high vacuum (UHV). The plasma-cleaned substrates can be transported through air and processed in another MBE chamber without any additional cleaning steps. Moreover, the deposited layers are stable to high-temperature treatment (900 °C) without any degradation effects in device quality.

• Published in Journal of Crystal Growth 157 (1995) 100-104
• For further information please contact UCP at ucpgroup@ucp.li 

^* Corresponding author.
^a Universität der Bundeswehr München, Fakultät Elektrotechnik, Institut für Physik, D-85577 Neubiberg, Germany
^b Daimler-Benz Forschungszentrum, D-89081 Ulm, Germany
^c Balzers Ltd., FL-9496 Balzers, Liechtenstein

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